APPARATUS AND METHOD FOR FORMING DEPOSITED FILM

PROBLEM TO BE SOLVED: To provide a method and an apparatus for forming a deposited film in which a photovoltaic element having no any characteristic irregularities can be obtained by depositing a semiconductor layer free from any un uniformity in film thickness and film quality. SOLUTION: In the dep...

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Hauptverfasser:	MORIYAMA KOUICHIROU, OKADA NAOTO, OZAKI HIROYUKI, SHIMODA HIROTSUGU, KANAI MASAHIRO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a method and an apparatus for forming a deposited film in which a photovoltaic element having no any characteristic irregularities can be obtained by depositing a semiconductor layer free from any un uniformity in film thickness and film quality. SOLUTION: In the deposited film forming method for continuously forming the deposited film on a substrate 104 by generating plasma in a plurality of continuous vacuum containers while continuously shifting the strip-like substrate 104 in the longitudinal direction thereof, the shape of an aperture in a discharging container is adjusted by an aperture adjusting plate 102 whose shape is set so that irregularities in the thickness of the deposited film in the width direction of the substrate are reduced based on the measurement of the distribution of the deposition speed.