OPTICAL MONITOR METHOD IN TWO-STEP CHEMICAL MECHANICAL POLISHING PROCESS
PROBLEM TO BE SOLVED: To provide a method and a device for detecting the polishing end point of a metal layer in a chemical mechanical polishing process. SOLUTION: An optical monitor system for two-step polishing generates a reflectance rate trace for each of plurality of radial zones. A CMP apparat...
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Zusammenfassung: | PROBLEM TO BE SOLVED: To provide a method and a device for detecting the polishing end point of a metal layer in a chemical mechanical polishing process. SOLUTION: An optical monitor system for two-step polishing generates a reflectance rate trace for each of plurality of radial zones. A CMP apparatus may switch from a high-selectivity slurry to a low-selectivity slurry when any of the reflectance rate traces indicates initial exposure of the metal layer, and the polishing operation is stopped when all of the reflectance rate traces indicate that an oxide layer is completely exposed. A polishing apparatus 20 comprises a series of a polishing station 22 and a transfer station 23. The transfer station 23 carries out various functions of: receiving each substrate 10 from a loading device (not shown in Fig.), cleaning the substrate, loading the substrate into a carrier head, receiving the substrate from the carrier head, cleaning the substrate again, and lastly returning the substrate to the loading device for transfer. |
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