SPIN VALVE STRUCTURE AND MANUFACTURING METHOD FOR THE SAME

PROBLEM TO BE SOLVED: To provide a spin valve structure, capable suppressing generating the Barkhausen noise and the assurance of high output characteristics to be compatible by strictly controlling a bias applying position, and to provide a method for manufacturing the same. SOLUTION: An insertion layer 48, made of a ruthenium(Ru), is arranged between a seed layer 42 and a free layer 43. Since electrons are reflected specularly on an interface between the layer 42 and the layer 48, shift of the bias-applying position is suppressed, and the applying position is controlled strictly. The electrons are reflected specularly on the interface between the free layer and the insertion layer, and hence a high GMR ratio is assured, even if the free layer is very thin. Thus, the high output characteristics can be assured, while suppressing the generation of the Barkhausen noise.