POSTETCHED PHOTORESIST AND METHOD FOR REMOVING RESIDUE

PROBLEM TO BE SOLVED: To provide an improved plasma ashing process for removing a photoresist and a postetched residue. SOLUTION: The method for removing the photoresist and the postetched residue comprises the steps of (a.) disposing a substrate having the photoresist and the postetched residue on...

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Bibliographische Detailangaben
Hauptverfasser:	WALDFRIED CARLO, BERRY IVAN LOUIS III, BAUSUM TERESA HOPE
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide an improved plasma ashing process for removing a photoresist and a postetched residue. SOLUTION: The method for removing the photoresist and the postetched residue comprises the steps of (a.) disposing a substrate having the photoresist and the postetched residue on the substrate, (b.) forming a reactive chemical species by adding a plasma gas composition containing a CHF3 as its one component, and (c.) exposing a surface of the substrate in a reaction chamber with its reactive chemical species.