DRY ETCHING APPARATUS AND METHOD OF TREATING SEMICONDUCTOR SUBSTRATE USING THE SAME

PROBLEM TO BE SOLVED: To solve problems of stability of reliability in wiring-forming process and in resist-stripping process where a metal-wiring layer is corroded by residual chlorine before treating with a chemical liquid or wherein reaction products formed by the reaction between etching gas and a substance to be etched or remaining of a photoresist film cannot be removed, even by chemical-liquid cleaning in the subsequent process. SOLUTION: The photoresist film on a substrate surface is removed to clean the surface by keeping reduced pressure in an etching apparatus, and continuing to the etching treatment, performing ozone-water ashing or deionized-water ashing. The means is to spray heated and vaporized functional water, which is ozone water obtained by forcing ozone gas be contained in deionized water, or which is ozone water obtained by electrolyzing deionized water onto the substrate after the dry etching, and to execute plasma processing to remove the photoresist film on the substrate surface.