APPARATUS AND METHOD FOR CHEMICAL VAPOR DEPOSITION

PROBLEM TO BE SOLVED: To form a film on the whole surface of a substrate in a uniform film thickness and film quality. SOLUTION: When constituting a chemical vapor deposition apparatus, which forms the film on the surface of the substrate 6 by supplying a gaseous starting material into an electrode...

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Bibliographische Detailangaben
Hauptverfasser:	YAMAMURA SUSUMU, MANSEI ATSUSHI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FREQUENCY-CHANGING INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To form a film on the whole surface of a substrate in a uniform film thickness and film quality. SOLUTION: When constituting a chemical vapor deposition apparatus, which forms the film on the surface of the substrate 6 by supplying a gaseous starting material into an electrode 4, upon which high-frequency electric power is impressed, and making the gas flow out of a plurality of gas holes 14 made through an electrode plate 12, a central gas pipeline 17 and a peripheral edge gas pipeline 18, both of which supply the gas into the electrode 4 and a central mass flow 19, and a peripheral edge mass flow 20, which respectively control the supplying amounts of the gas through the pipelines 17 and 18, are arranged in the electrode 4. Therefore, uniform flow out of the from the whole surface of the electrode plate 12 can be made, and accordingly, the gas can be supplied uniformly to the whole surface of the substrate 6.