SUBSTRATE-PROCESSING METHOD AND APPARATUS

PROBLEM TO BE SOLVED: To provide an applying/developing apparatus, capable of transferring a substrate from an exposure system to a heating section, and restraining a resolution reaction from proceeding in a resist so as to improve a developed line in uniformity of width. SOLUTION: The inside of an...

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Hauptverfasser:	DEGUCHI MASATOSHI, KATANO TAKAYUKI, IIDA NARIAKI
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TOSURFACES, IN GENERAL APPARATUS SPECIALLY ADAPTED THEREFOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY CONVEYING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HANDLING THIN OR FILAMENTARY MATERIAL HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PACKING PERFORMING OPERATIONS PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS PNEUMATIC TUBE CONVEYORS PROCESSES FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TOSURFACES, IN GENERAL SEMICONDUCTOR DEVICES SHOP CONVEYOR SYSTEMS SPRAYING OR ATOMISING IN GENERAL STORING TRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING ORTIPPING TRANSPORTING
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide an applying/developing apparatus, capable of transferring a substrate from an exposure system to a heating section, and restraining a resolution reaction from proceeding in a resist so as to improve a developed line in uniformity of width. SOLUTION: The inside of an interface station S3 located between a processing station S2, at which a development process is carried out and an exposure system S4 is cooled down to a temperature of 10 to 15 deg.C at which a resolution reaction hardly proceeds, and a heating section 31 promoting a resolution reaction in resist is provided inside the interface station S3. By this setup, a wafer W subjected to an exposure processing can be transferred from the exposure system S4 to the heating section 31 in a state of restraining resolution reaction from proceeding in resist, so that resist can be kept almost at the same level of resolution reaction, and a developed line can be improved in uniformity of width, by preventing unevenness from occurring in its width.