MAGNETORESISTANCE SENSOR ELEMENT AND ITS MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To provide a magnetoresistance sensor element of a spin bubble type, where reading of magnetic recording information of ultrahigh density of 20 Gb/in2 in higher is enabled, and a manufacturing method of the sensor element. SOLUTION: A lower base substance layer 42, a seed layer 43, an anti ferromagnetic magnetizing direction fixing function layer 44, a layer 45 whose ferromagnetic magnetizing direction is to be fixed, an dia magnetic spacer layer 46, a ferromagnetic free layer 47 constituted of a super thin film layer (CoFe) and an Nife layer, a TaO layer 48 and a first protective layer 49 (NiCr), are laminated on a lower shield 40. A pair of longitudinal bias layers 76, formed of a hard magnetic material, are arranged from a surface of the ferromagnetic free layer 47 to side surfaces, so as to be in contact with respective side surfaces of the TaO layer 48 and the first protective layer 49. Conductive lead layers 78 are formed on the longitudinal bias layers 76, respectively. The TaO layer 48 and the first protective layer 49 function as mirror surface reflecting layers of conduction electrons.