APPARATUS AND METHOD FOR PLASMA TREATMENT
PROBLEM TO BE SOLVED: To provide a method and an apparatus for plasma treatment by which a base material can be treated in a flat condition without any curl by the vacuum film deposition method (the sputtering method) when a conductive film for forming the wiring is deposited on both sides of the ba...
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Format: | Patent |
Sprache: | eng |
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Zusammenfassung: | PROBLEM TO BE SOLVED: To provide a method and an apparatus for plasma treatment by which a base material can be treated in a flat condition without any curl by the vacuum film deposition method (the sputtering method) when a conductive film for forming the wiring is deposited on both sides of the base material, and the conductive film is surely deposited in a through hole portion (a hole) when forming a connection portion in the through hole portion (the hole) of the small diameter. SOLUTION: The plasma treatment apparatus which excites the plasma in a vessel, and having plasma treatment units 110, 120, 130 each in a sheet shape and simultaneously performing the plasma treatment in the plasma from both sides of a work 180 which is formed of a laminate with an insulator, a conductor or a combination thereof and continuous in a strip, comprises the vessel to perform the plasma treatment, a gas feed system, an exhaust system, counter electrodes and a high frequency power source, and performs the plasma treatment while applying the high frequency of the phase opposite to each other to one and the other of the counter electrodes facing each other. |
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