METHOD OF PREPARING FERROELECTRIC THIN FILM AND DEVICE FOR PREPARING SAME

PROBLEM TO BE SOLVED: To provide a method and a device to prepare thin ferroelectric film with improved fatigue characteristic and reduced deterioration of ferroelectric crystal structure due to the membrane stress generating in the heating stage and accumulated in the substrate at the crystallizati...

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Bibliographische Detailangaben
Hauptverfasser:	NATORI EIJI, KUNO TADAAKI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL INORGANIC CHEMISTRY METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a method and a device to prepare thin ferroelectric film with improved fatigue characteristic and reduced deterioration of ferroelectric crystal structure due to the membrane stress generating in the heating stage and accumulated in the substrate at the crystallization of the membrane. SOLUTION: This method consists in heating and crystallizing the ferroelectric thin film laminated to the substrate in the deformed state by pressing down the substrate at the central part. By adjusting the amount of press- down, membrane stress applied to the ferroelectric thin film can be controlled as desired resulting in the improvement of the crystal structure.