METHOD OF MANUFACTURING INSULATED GATE SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To solve a problem in the conventional case wherein micronization of trench formation is indispensable when the cell density of a power MOSFET is improved, working dimension of a trench opening is limited to an optical limit of an aligner, and introduction of new installation i...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	KUBO HIROTOSHI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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