SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To provide a semiconductor device improved so as to form a capacitor having a large capacitance with a smaller surface area. SOLUTION: A second conductor layer 20 composed of a transition metal silicide layer is formed on a first silicon-containing conductor layer 19. On the se...

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Bibliographische Detailangaben
Hauptverfasser: KUROIWA TAKEHARU, SHIBANO TERUO, OSANAGA TAKASHI, YONEDA KIWA
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a semiconductor device improved so as to form a capacitor having a large capacitance with a smaller surface area. SOLUTION: A second conductor layer 20 composed of a transition metal silicide layer is formed on a first silicon-containing conductor layer 19. On the second conductor layer 20 is provided a third nitrogen-containing conductor layer 30 composed of the same transition metal silicide layer as the transition metal silicide layer. A fourth conductor layer 21 is provided on the third conductor layer 30.