SEMICONDUCTOR MEMORY

PROBLEM TO BE SOLVED: To realize high speed of read-operation of a semiconductor memory, especially, a static random access memory(SRAM). SOLUTION: Respective memory cell 1 is constituted of a latch circuit 21, data lines 22 and 23 for read-write, a data line 24 for write-only, a transfer gate 25 connecting one side of output terminals of the latch circuit 21 to the data line 22 for read-write, a transfer gate 26 connecting the other side to the data line 24 for write-only, and word lines 27a for selecting a memory cell, plural memory cells arranged in the direction of column are divided into groups, by connecting them to the data line for read-write, the number of memory cells connected to one data line for read-write is reduced, and high speed of read-operation is realized by reducing load capacity.