MONO-CRYSTAL PROCESSING METHOD

PROBLEM TO BE SOLVED: To perform cylindrical grinding of silicon mono-crystals without a drop of the yield by reducing local breaking stresses applied to the mono- crystals when multi-crystal silicon is melted followed by pulling-up of silicon mono-crystals and then the silicon mono-crystals are to...

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Bibliographische Detailangaben
1. Verfasser:	YAMAGISHI HIROTOSHI
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH DRESSING OR CONDITIONING OF ABRADING SURFACES FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING METALLURGY PERFORMING OPERATIONS POLISHING PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH TRANSPORTING UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To perform cylindrical grinding of silicon mono-crystals without a drop of the yield by reducing local breaking stresses applied to the mono- crystals when multi-crystal silicon is melted followed by pulling-up of silicon mono-crystals and then the silicon mono-crystals are to be ground into the specified diameter. SOLUTION: A polyurethane sheet 13 is pinched to serve as a buffer material, and the end face 11 of mono-crystal and a pseodo-tail 12 are adhered together using polyepoxy bonding agent and fixed to a cylindrical grinding machine, and cylindrical grinding is performed. After finishing the cylindrical grinding, the polyurethane sheet 13 is torn off using a knife, etc., and the end face 11 of mono-crystal and the pseudo-tail 12 are separated from each other.