SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

PROBLEM TO BE SOLVED: To enable a lead-out electrode on a semiconductor chip to be improved in reliability and in a adhesion to a bonding material. SOLUTION: A lead-out electrode 2 at least in a bonding region is composed of a Cu wiring 2a which is comparatively thick and buried inside a recessed pa...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: TORII KATSUHIRO, OHIRA YOSHIKAZU, ASHIHARA YOJI, AOKI HIDEO
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To enable a lead-out electrode on a semiconductor chip to be improved in reliability and in a adhesion to a bonding material. SOLUTION: A lead-out electrode 2 at least in a bonding region is composed of a Cu wiring 2a which is comparatively thick and buried inside a recessed pattern 4 and a comparatively thin, Al film 2b coating the Cu wiring 2a.