METHOD OF MANUFACTURING CAPACITOR OF SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a method of manufacturing a capacitor of a semiconductor device which has superior electric characteristics and can secure a large capacity. SOLUTION: The method of manufacturing a capacitor comprises a stage wherein a lower electrode is formed on a lower structure o...

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Bibliographische Detailangaben
Hauptverfasser:	YANA KOUZEN, LEE KI-JUNG
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a method of manufacturing a capacitor of a semiconductor device which has superior electric characteristics and can secure a large capacity. SOLUTION: The method of manufacturing a capacitor comprises a stage wherein a lower electrode is formed on a lower structure of a semiconductor substrate, a stage wherein, after forming an amorphous TaON thin film on the lower electrode, a heat treatment is conducted in an NH3 atmosphere to form a Ta3N5 dielectric film, and a stage wherein an upper electrode is formed on the Ta3N5 dielectric film.