SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

PROBLEM TO BE SOLVED: To provide a semiconductor deice provided with a fine thin film capacitor using a material of a high permittiyity and also provide a method of manufacturing the same. SOLUTION: The semiconductor device is provide with a capacitor which comprises a lower electrode 5, dielectric...

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Bibliographische Detailangaben
Hauptverfasser: KUROIWA TAKEHARU, SHIBANO TERUO, OSANAGA TAKASHI, YONEDA KIWA
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a semiconductor deice provided with a fine thin film capacitor using a material of a high permittiyity and also provide a method of manufacturing the same. SOLUTION: The semiconductor device is provide with a capacitor which comprises a lower electrode 5, dielectric film 7 formed of a material of a high permittivity and formed on the lower electrode 5, and an upper electrode formed on the dielectic film 7. Further, the device has an insulation layer 2 formed on a principal plane of a semiconductor substrate 1 and a reation preventive layer 6 formed between the lower electrode 2 and conductive layer 4 for preventing a reaction therewith at a lower position than a first surface of the insulation layer 2.