METHOD OF MANUFACTURING SEMICONDUCTOR STRUCTURE DEVICE

PROBLEM TO BE SOLVED: To provide a method of manufacturing a ferroelectric memory. SOLUTION: A switching resistor (2) is formed on a semiconductor substrate (1), an isolation layer (4) is deposited on the switching transistor (2), and then a memory capacitor provided with a lower electrode (7) forme...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	DEHM CHRISTINE, KASTNER MARCUS, HARTNER WALTER, SCHINDLER GUENTHER DR
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!