METHOD OF MANUFACTURING SEMICONDUCTOR STRUCTURE DEVICE

PROBLEM TO BE SOLVED: To provide a method of manufacturing a ferroelectric memory. SOLUTION: A switching resistor (2) is formed on a semiconductor substrate (1), an isolation layer (4) is deposited on the switching transistor (2), and then a memory capacitor provided with a lower electrode (7) formed of platinum and a ferroelectric or paraelectric (8) is formed on the isolation layer. In order to protect the dielectric against intrusion of hydrogen in following manufacturing processes, a first barrier layer (5) is embedded in the isolation layer (4) and, after formation of the memory capacity, a second barrier layer (10) connected to the first barrier layer (5) is deposited.