SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND ITS DRIVING METHOD

SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND ITS DRIVING METHOD

PROBLEM TO BE SOLVED: To provide a programmable device or neuro-device wherein the parasitic capacitance on wirings is reduced to make the operation speed high and the number of mountable basic cells or neurons per chip is increased to make the application range wide. SOLUTION: All or part of transf...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: MOGAMI TORU, SUGIBAYASHI NAOHIKO
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To provide a programmable device or neuro-device wherein the parasitic capacitance on wirings is reduced to make the operation speed high and the number of mountable basic cells or neurons per chip is increased to make the application range wide. SOLUTION: All or part of transfer gates functioning for changing wiring routes are selectively formed on an insulator, they are TFTs (34, 35, and 36) in a layer insulation film 28 and the transfer gates may be switches for selecting input/output signals for basic gates of a programmable device or switches for selecting bonded synapses of a neuro-device. Programmable or fixed logic gates are formed on a silicon substrate surface as a bulk type device.