CAPACITOR USED IN SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

PROBLEM TO BE SOLVED: To provide a capacitor structure for avoiding disadvantages of a structure and a manufacturing process of a conventional technique and to provide a manufacturing method thereof. SOLUTION: The capacitor of the present invention that is used in a semiconductor device comprises a first capacitor electrode 164 including a part of a damascene interconnect structure, an insulating layer 166 which is formed on the damascene interconnect structure and acts as a passivation layer, and a second capacitor electrode 168 including a conductive layer formed at least on a part of the insulating layer. The semiconductor device includes the damascene interconnect structure formed on a substrate of a semiconductor wafer.