GALLIUM NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT AND MANUFACTURING METHOD THEREFOR

GALLIUM NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT AND MANUFACTURING METHOD THEREFOR

PROBLEM TO BE SOLVED: To provide a gallium nitride semiconductor light emitting element which is superior in mechanical strength, which is not easily deteriorated even in high temperature/high humidity environment, and which has the high take-out efficiency of light to an outer part. SOLUTION: A gal...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: TOKUJI SHIGEKAZU, YAMAJI TAHEI
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To provide a gallium nitride semiconductor light emitting element which is superior in mechanical strength, which is not easily deteriorated even in high temperature/high humidity environment, and which has the high take-out efficiency of light to an outer part. SOLUTION: A gallium nitride semiconductor light emitting element is provided, having an ITO film whose film thickness is 100 or more as a current diffusion layer, where at least its first layer is formed on a P-type GaN semiconductor layer by a vacuum vapor deposition method.