HIGH-VOLTAGE INTEGRATED CIRCUIT CHIP

PROBLEM TO BE SOLVED: To provide a circuit for driving a power transistor of half-bridged configuration anticipating excessive negative swing at an output node. SOLUTION: Relating to a high-voltage integrated circuit(HVIC) chip where a resistor 32 is connected between a substrate of the chip and a g...

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Bibliographische Detailangaben
Hauptverfasser: CHEY CHRISTOPHER C, VUKICEVIC MARIJANA
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To provide a circuit for driving a power transistor of half-bridged configuration anticipating excessive negative swing at an output node. SOLUTION: Relating to a high-voltage integrated circuit(HVIC) chip where a resistor 32 is connected between a substrate of the chip and a ground, the resistor 32 limits the current flowing a diode 31 when the specific diode 31 of the chip is made conductive by a negative transient phenomenon at the output node, for significantly improved process for negative voltage spike.