METHOD FOR EVALUATING CONCENTRATION OF METAL IMPURITY IN SILICON WAFER

PROBLEM TO BE SOLVED: To solve such problems that include other than improving the sensitivity of an analyzing device itself, methods for how to extract metal contained in silicon to its surface, and how to recover the metal, for evaluating metal in a silicon bulk with high sensitivity. SOLUTION: In...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
1. Verfasser: MIZUNO MICHIHIKO
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To solve such problems that include other than improving the sensitivity of an analyzing device itself, methods for how to extract metal contained in silicon to its surface, and how to recover the metal, for evaluating metal in a silicon bulk with high sensitivity. SOLUTION: In the method for evaluating metal impurities in a silicon wafer, concentrated sulfuric acid is dropped onto the surface of the silicon wafer to extract the metal impurities dissolved in the silicon wafer into the concentrated sulfuric acid. The metal impurities in the concentrated sulfuric acid are chemically analyzed.