PVD-IMP TUNGSTEN AND TUNGSTEN NITRIDE AS LINER, BARRIER AND/OR SEED LAYER FOR APPLICATION OF TUNGSTEN, ALUMINUM AND COPPER

PROBLEM TO BE SOLVED: To improve a liner, barrier and/or seed layer so as to reduce the corrosion caused by a succeeding precursor reaction agent and accelerate superior shape follow-up coverage of a succeeding layer. SOLUTION: A method, for depositing tungsten-based liner layer 52/barrier layer 54 on a substrate 40 by using preferably a high density plasma enhanced CVD process, such as an ionized metal plasma(IMP) process, or another process where sputter flux of a material from a target is ionized, is provided. In the case where the liner layer 52/barrier layer 54 composed of Ti and/or TiN are deposited, a method where tungsten is deposited on the above by PVD-IMP treatment to reduce or remove the reaction between WF6 and Ti, TiN and Si materials is provided. Tungsten can be deposited in the presence of a nitrogen source so as to form the liner layer 52/barrier layer 54 composed of tungsten nitride. Further, after the deposition of the tungsten liner layer 52/barrier 54, another tungsten layer 56 can be deposited by a CVD process.