METHOD OF MANUFACTURING SEMICONDUCTOR ELEMENT

PROBLEM TO BE SOLVED: To reduce the number of processing steps when manufacturing a semiconductor element having a via, which is formed through a material having a low permittivity. SOLUTION: A first conductive layer is formed near the substrate, an etching stopping layer is formed on the first cond...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	MOLLOY SIMON JOHN, ROY PRADIP K, NEISU RAYADI, MERCHANT SAILESH M
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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