PLASMA ENHANCED CVD SYSTEM FOR LARGE-DIAMETER CARBON NANOTUBE THIN FILM DEPOSITION, AND METHOD OF DEPOSITION FOR THE THIN FILM
PROBLEM TO BE SOLVED: To provide a CVD system for large-diameter carbon nanotube thin film deposition, requiring no much labor having high production capacity of carbon nanotube and low electric power consumption and reduced in manufacturing cost, and a method of deposition for the thin film. SOLUTI...
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creator | AGAWA YOSHIAKI MURAKAMI HIROHIKO TAKAHASHI SHOJIRO YAMAMOTO YOSHIHIRO YAMAGUCHI KOICHI HIRAKAWA MASAAKI |
description | PROBLEM TO BE SOLVED: To provide a CVD system for large-diameter carbon nanotube thin film deposition, requiring no much labor having high production capacity of carbon nanotube and low electric power consumption and reduced in manufacturing cost, and a method of deposition for the thin film. SOLUTION: In the CVD system for carbon nanotube thin film deposition by means of microwave plasma enhanced chemical vapor deposition, a plurality of microwave generation systems are arranged in a row and the cavities of the systems are arranged right above the upper lid of the deposition chamber. A plurality of slits are provided to the bottoms of the cavities of the microwave generation systems and the microwave is passed through these slit and introduced into the deposition chamber via the quartz upper lid right under the cavities. The carbon nanotube thin film can be deposited by using this system. |
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SOLUTION: In the CVD system for carbon nanotube thin film deposition by means of microwave plasma enhanced chemical vapor deposition, a plurality of microwave generation systems are arranged in a row and the cavities of the systems are arranged right above the upper lid of the deposition chamber. A plurality of slits are provided to the bottoms of the cavities of the microwave generation systems and the microwave is passed through these slit and introduced into the deposition chamber via the quartz upper lid right under the cavities. The carbon nanotube thin film can be deposited by using this system.</description><edition>7</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; COMPOUNDS THEREOF ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; INORGANIC CHEMISTRY ; METALLURGY ; NON-METALLIC ELEMENTS ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2001</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20010717&DB=EPODOC&CC=JP&NR=2001192830A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76294</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20010717&DB=EPODOC&CC=JP&NR=2001192830A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>AGAWA YOSHIAKI</creatorcontrib><creatorcontrib>MURAKAMI HIROHIKO</creatorcontrib><creatorcontrib>TAKAHASHI SHOJIRO</creatorcontrib><creatorcontrib>YAMAMOTO YOSHIHIRO</creatorcontrib><creatorcontrib>YAMAGUCHI KOICHI</creatorcontrib><creatorcontrib>HIRAKAWA MASAAKI</creatorcontrib><title>PLASMA ENHANCED CVD SYSTEM FOR LARGE-DIAMETER CARBON NANOTUBE THIN FILM DEPOSITION, AND METHOD OF DEPOSITION FOR THE THIN FILM</title><description>PROBLEM TO BE SOLVED: To provide a CVD system for large-diameter carbon nanotube thin film deposition, requiring no much labor having high production capacity of carbon nanotube and low electric power consumption and reduced in manufacturing cost, and a method of deposition for the thin film. 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SOLUTION: In the CVD system for carbon nanotube thin film deposition by means of microwave plasma enhanced chemical vapor deposition, a plurality of microwave generation systems are arranged in a row and the cavities of the systems are arranged right above the upper lid of the deposition chamber. A plurality of slits are provided to the bottoms of the cavities of the microwave generation systems and the microwave is passed through these slit and introduced into the deposition chamber via the quartz upper lid right under the cavities. The carbon nanotube thin film can be deposited by using this system.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMPOUNDS THEREOF DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL INORGANIC CHEMISTRY METALLURGY NON-METALLIC ELEMENTS SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
title | PLASMA ENHANCED CVD SYSTEM FOR LARGE-DIAMETER CARBON NANOTUBE THIN FILM DEPOSITION, AND METHOD OF DEPOSITION FOR THE THIN FILM |
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