FUSE PART OF SEMICONDUCTOR ELEMENT, AND FORMATION METHOD THEREFOR

PROBLEM TO BE SOLVED: To provide the fuse part of a semiconductor element, and its formation method. SOLUTION: A protective film, that is made of a passivation film 144, is provided to prevent moisture from entering from the sidewall of a fuse opening 148. For forming the protective film, first, an etching stop film is formed at the upper portion of a fuse line 124, and the etching stop line is utilized for forming a fuse opening 148 along with a contact hole. Then, a conductive substance layer for forming upper-layer wiring 142' is formed, a conductive substance at the part of the fuse opening 148 is eliminated and the exposed etching stop film is removed. Finally, the passivation film 144 is formed, and the passivation film 144, at the upper portion of the fuse line 124 in the part of the fuse opening part 148 where laser beams are applied, is removed. With this method, the protective film is formed without addition of processes, thus preventing the moisture from entering from the interface among the interlayer insulation films 120, 126, and 140. Furthermore, there is no need to provide another photoetching process for forming the fuse opening 148.