METHOD MANUFACTURING SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a method of manufacturing semiconductor device, by which the productivity of a semiconductor device can be improved by forming CVD films having the same thickness, on the surfaces to be treated of two wafers. SOLUTION: In this film-forming step of the method of manufacturing semiconductor device, in which CVD films 65a and 65b of a film-forming seed 39 contained in a gaseous starting material 38 are respectively formed upper- and lower stage wafers 31 and 32 arranged in the upper and lower stages of a holding jig 4 set up in the treatment chamber 3 of a horizontal hot-wall type two water low pressure CVD system 1, by making the gas 38 to flow in parallel with the wafers 31 and 32, the main surfaces 31a and 32a of the waters 31 and 32 are faced opposite to each other by arranging the wafer 31 with its main surface 31a downward and the wafer 32 with its main surface facing upward. Accordingly when the film forming seed 39 deposits on the main surfaces 31a and 32a, the thicknesses of the CVD films formed on the surfaces 31a and 32a become equal to each other, because the surfaces 31a and 32a commonly use the atmosphere of the seed 39 and the seed 39 is deposited under the same condition. In addition, since two identical wafers can be manufactured in each film-forming step, the productivity of a semiconductor device can be improved.