METHOD FOR FABRICATING LOW TEMPERATURE OPERATION SEMICONDUCTOR LASER

METHOD FOR FABRICATING LOW TEMPERATURE OPERATION SEMICONDUCTOR LASER

PROBLEM TO BE SOLVED: To provide a distribution feedback type laser having a low threshold value in which low temperature performance is improved. SOLUTION: Probability of laser oscillation occurring in the vicinity of the short wavelength side of a stop band is increased using an active layer 18, a...

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Bibliographische Detailangaben
Hauptverfasser: ENG LARS E, ROBERTSON ALEXANDER, WILT DANIEL PAUL, KAMATH KISHORE K, JAMBUNATHAN RAM
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRICITY
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a distribution feedback type laser having a low threshold value in which low temperature performance is improved. SOLUTION: Probability of laser oscillation occurring in the vicinity of the short wavelength side of a stop band is increased using an active layer 18, a spacer layer 16 and a loss grating layer 14 and the effect of negative gain inclination occurring at the time of detuning of a DFB laser in the positive direction is canceled thus obtaining a method for fabricating a DFB laser having an improved side mode suppression ratio(SMSR) at low temperature.