FLIP-CHIP STRUCTURE OF SEMICONDUCTOR DEVICE

FLIP-CHIP STRUCTURE OF SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide the flip-chip structure of a semiconductor device of which reliability is secured under a high-temperature environment. SOLUTION: SnAg solder bumps 3 are formed on the Al electrodes 2 of a semiconductor device 1. The solder bumps 3 are bonded to AgPt electrodes 12 on...

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Bibliographische Detailangaben
Hauptverfasser: TAKAMI SHIGENARI, YAMAMOTO MASAHIRO, KUZUHARA KAZUNARI, TANAKA YASUSHI, TOYODA RYOKO, MOMOI YOSHINOBU, MAKINO ATSUSHI, SETO HISAO, INOUE TOMOHIRO
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To provide the flip-chip structure of a semiconductor device of which reliability is secured under a high-temperature environment. SOLUTION: SnAg solder bumps 3 are formed on the Al electrodes 2 of a semiconductor device 1. The solder bumps 3 are bonded to AgPt electrodes 12 on a board 11 by reflow soldering. Furthermore, a gap between the semiconductor device 1 and the board 11 is filled with a resin 20, and the resin 20 is cured for mounting the semiconductor device 1 on the board 11. Voids and cracks will not be produced in the neighborhoods of the boundaries between the solder bumps 3 and the Al electrodes 2 or the AgPt electrodes 12. As a result, electrical connections between the Al electrodes 2 of the semiconductor device 1 and the AgPt electrodes 12 on the board 11 can be maintained satisfactorily, and reliability can be secured.