NONVOLATILE SEMICONDUCTOR MEMORY AND TESTING METHOD THEREFOR
PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory which can perform efficiently the test of a data hold characteristic of a ferroelectric nonvolatile memory highly accurately and with less samples, and its testing method. SOLUTION: This device is provided with a cell plate line con...
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creator | CHATANI SHIGEO |
description | PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory which can perform efficiently the test of a data hold characteristic of a ferroelectric nonvolatile memory highly accurately and with less samples, and its testing method. SOLUTION: This device is provided with a cell plate line connected to one side of electrodes of a ferroelectric capacitor, a data line connected to the other side of electrodes of the ferroelectric capacitor via a MOS transistor and outputting data from a memory cell, an AD conversion circuit 5 connected to the data line and converting the outputted data to a digital signal, an input/ output circuit 103 outputting the digital signal outputted from the AD conversion circuit 5 to an output terminal or inputting the digital signal from the external terminal, further a D/A conversion circuit 7 for converting the inputted digital signal to potentials of a data line and a cell plate line. |
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SOLUTION: This device is provided with a cell plate line connected to one side of electrodes of a ferroelectric capacitor, a data line connected to the other side of electrodes of the ferroelectric capacitor via a MOS transistor and outputting data from a memory cell, an AD conversion circuit 5 connected to the data line and converting the outputted data to a digital signal, an input/ output circuit 103 outputting the digital signal outputted from the AD conversion circuit 5 to an output terminal or inputting the digital signal from the external terminal, further a D/A conversion circuit 7 for converting the inputted digital signal to potentials of a data line and a cell plate line.</description><edition>7</edition><language>eng</language><subject>INFORMATION STORAGE ; MEASURING ; MEASURING ELECTRIC VARIABLES ; MEASURING MAGNETIC VARIABLES ; PHYSICS ; STATIC STORES ; TESTING</subject><creationdate>2001</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20010529&DB=EPODOC&CC=JP&NR=2001148200A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,778,883,25547,76298</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20010529&DB=EPODOC&CC=JP&NR=2001148200A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>CHATANI SHIGEO</creatorcontrib><title>NONVOLATILE SEMICONDUCTOR MEMORY AND TESTING METHOD THEREFOR</title><description>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory which can perform efficiently the test of a data hold characteristic of a ferroelectric nonvolatile memory highly accurately and with less samples, and its testing method. 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subjects | INFORMATION STORAGE MEASURING MEASURING ELECTRIC VARIABLES MEASURING MAGNETIC VARIABLES PHYSICS STATIC STORES TESTING |
title | NONVOLATILE SEMICONDUCTOR MEMORY AND TESTING METHOD THEREFOR |
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