NONVOLATILE SEMICONDUCTOR MEMORY AND TESTING METHOD THEREFOR

PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory which can perform efficiently the test of a data hold characteristic of a ferroelectric nonvolatile memory highly accurately and with less samples, and its testing method. SOLUTION: This device is provided with a cell plate line con...

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1. Verfasser: CHATANI SHIGEO
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory which can perform efficiently the test of a data hold characteristic of a ferroelectric nonvolatile memory highly accurately and with less samples, and its testing method. SOLUTION: This device is provided with a cell plate line connected to one side of electrodes of a ferroelectric capacitor, a data line connected to the other side of electrodes of the ferroelectric capacitor via a MOS transistor and outputting data from a memory cell, an AD conversion circuit 5 connected to the data line and converting the outputted data to a digital signal, an input/ output circuit 103 outputting the digital signal outputted from the AD conversion circuit 5 to an output terminal or inputting the digital signal from the external terminal, further a D/A conversion circuit 7 for converting the inputted digital signal to potentials of a data line and a cell plate line.