FIELD EFFECT TRANSISTOR WITH SOURCE/DRAIN OF LIFT STRUCTURE AND MANUFACTURING METHOD THEREFOR

PROBLEM TO BE SOLVED: To provide a field effect transistor with source/drain region of lift structure, which prevents facets that are produced when the source/drain regions are formed through the selective growth of an epitaxial layer and its manufacturing method. SOLUTION: A gate stack is formed on...

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Bibliographische Detailangaben

Hauptverfasser:	LEE GIL-GWANG, SO GENSHO, BOKU SEIU, SAI TAIKI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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