METHOD OF MANUFACTURING SEMICONDUCTOR WAFER INCLUDING ANNEALING AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor wafer and a semiconductor device which includes annealing, a process of curing defects on the semiconductor wafer or on the surface of a semiconductor device to reduce a surface roughness caused by the defects. SOLUTION: A semiconductor wafer or semiconductor device having surface defects generated in a stage of manufacturing the semiconductor wafer or in a specified process of manufacturing the semiconductor device is annealed in a hydrogen gas atmosphere including a semiconductor material source gas at low temperatures of 950 deg.C or lower in a high vacuum of 102 Torr or below. This annealing process can be applied mainly to a polishing process for manufacturing the wafer, or an ion implantation process, a dry etching process or a chemical mechanical polishing process for manufacturing the semiconductor device. This annealing can be executed at low temperatures and in a short time, increasing the reliability and economy of the device.