FIELD EMISSION TYPE COLD CATHODE AND METHOD OF FABRICATING THE SAME

PROBLEM TO BE SOLVED: To provide a cold cathode device comprising a plane electron emission material arranged on a cathodic electrode which can form gate openings of an insulation film and a gate wiring easily and without loosing electron emission property, and a gate electrode formed through the in...

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1. Verfasser: TAKEMURA HISASHI
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a cold cathode device comprising a plane electron emission material arranged on a cathodic electrode which can form gate openings of an insulation film and a gate wiring easily and without loosing electron emission property, and a gate electrode formed through the insulation film, and a method of fabricating the same. SOLUTION: This method is provided for fabricating a field emission type cold cathode consisting of a cathodic electrode 2 formed on a substrate, an electron emission materials 3 formed on the cathodic electrode 2, an insulation film 4 having an opening on the electron emission material and a gate electrode 5 formed on the insulation film and having an opening on the electron emission material. The method is composed of a step (b) of sequentially forming an insulation film layer having photosensitive property on the upper portion of the electron emission material layer and a gate electrode film layer having photosensitive property, a step (c) of exposing desired region of the insulation film layer and the gate electrode film layer, a process (e) of patterning the insulation film layer and the gate electrode film layer by development treatment.