VAPOR PHASE GROWTH SYSTEM AND MANUFACTURING METHOD OF SEMICONDUCTOR SYSTEM

PROBLEM TO BE SOLVED: To improve a yield and quality in wafer film deposition and to improve operation rate of a system by reducing a particle generated around a turbo pump. SOLUTION: A cleaning gas introduction port 5 is arranged to a reaction chamber 1 side face and is connected to an applicator 1...

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1. Verfasser: OHASHI YUZURU
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To improve a yield and quality in wafer film deposition and to improve operation rate of a system by reducing a particle generated around a turbo pump. SOLUTION: A cleaning gas introduction port 5 is arranged to a reaction chamber 1 side face and is connected to an applicator 18 at a cleaning gas introduction tube 22. Plural cleaning gas introduction ports 6 are mounted to a turbo pump suction port 12 and are connected to the applicator 18 at the cleaning gas introduction tube 22. By opening a gate valve 9, evacuating the reaction chamber 1 with a turbo pump 11 and supplying a reaction gas, film deposition is conducted on wafer 2. After the film deposition, the wafer 2 is carried out, after the gate valve 9 is closed, the cleaning gas is supplied to the reaction chamber 1 and the turbo pump 11 so as to simultaneously clean both.