SILICON CARBIDE SINGLE CRYSTAL AND METHOD FOR PRODUCTION THEREOF

PROBLEM TO BE SOLVED: To expand the utilization range of a silicon carbide single crystal as a material for producing a semiconductor device by suppressing the impurity content to ppb order while keeping high quality comparable or superior to that of a device having an SiO2 layer as an intermediate layer and keeping high production efficiency. SOLUTION: An Si layer 2 is formed on the surface of an α-SiC single crystal substrate 1 e.g. by thermal CVD method, a part of the surface of the Si layer 2 is oxidized to form an SiO2 layer 3, a polycrystalline β-SiC plate 4 is laminated in closely contacting state on the surface of the SiO2 layer 3 by thermal CVD method, etc., and the laminated composite material 5 is heat-treated in an inert gas atmosphere under saturated SiC vapor pressure to convert the polycrystalline layer of the polycrystalline plate 4 into a single crystal along the crystal orientation of the α-SiC single crystal substrate 1 and achieve the integral growth of the single crystal SiC.