ELECTRON BEAM EXPOSURE SYSTEM, ADJUSTING METHOD, AND BLOCK MASK

PROBLEM TO BE SOLVED: To provide an adjusting method of an exposure system for measuring and accurately setting the positional relation of a deflected beam deflected by a mask deflecting unit and with respect to opened patterns. SOLUTION: An electron beam exposure system includes an electron gun 11, a block mask 21 having a plurality of opened patterns 61, mask-deflecting units 16, 18, 23, and 25, for deflecting the opened patterns 61, passing the beam into one opened pattern selectively, and returning the transmitted electron beam, a focusing unit 30 for focusing the electron beam on a workpiece, and deflecting units 21 and 32 for deflecting the electron beam. Plural opened patterns 61 are arranged in a matrix form, and each opened pattern has a square or rectangular shape of maximally opened region 63. In the mask-deflecting units, a block mask has an adjusting opened pattern with independent openings 71 to 74 of the same shape, arranged along a side opposite to the maximum opened region and are adjusted so that the beam intensity at each opening is made the same and is maximum.