SINGLE-ELECTRON TRANSISTOR AND MANUFACTURING METHOD THEREFOR

PROBLEM TO BE SOLVED: To provide a method for manufacturing a single-electron transistor that is operated at a room temperature and has a simple manufacturing process. SOLUTION: In the method for manufacturing a single-electron transistor, a surface oxide layer 3 between a source electrode 4 and a d...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	INOUE ATSUHISA, FUJIOKA KAZUSHI, ONO KIMITAKA
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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