SINGLE-ELECTRON TRANSISTOR AND MANUFACTURING METHOD THEREFOR

PROBLEM TO BE SOLVED: To provide a method for manufacturing a single-electron transistor that is operated at a room temperature and has a simple manufacturing process. SOLUTION: In the method for manufacturing a single-electron transistor, a surface oxide layer 3 between a source electrode 4 and a d...

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Bibliographische Detailangaben
Hauptverfasser: INOUE ATSUHISA, FUJIOKA KAZUSHI, ONO KIMITAKA
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a method for manufacturing a single-electron transistor that is operated at a room temperature and has a simple manufacturing process. SOLUTION: In the method for manufacturing a single-electron transistor, a surface oxide layer 3 between a source electrode 4 and a drain electrode 5 on a substrate 2 with the electrode structure of the source electrode 4, a gate electrode 6, and the drain electrode 5 formed in advance is partially released by a probe 9 in a solution containing a colloid particle 7 terminated by a thiol derivative molecule, thus exposing a substrate material-cleaning surface 8 to the solution. Then, the colloid particle 7 is selectively and chemically adsorbed, only on the substrate material surface 8 that has been exposed by the operation due to self-organization operation, thus forming the colloid particle 7 between the source electrode 4 and the gate electrode 6 in a single row.