SINGLE-ELECTRON TRANSISTOR AND MANUFACTURING METHOD THEREFOR

SINGLE-ELECTRON TRANSISTOR AND MANUFACTURING METHOD THEREFOR

PROBLEM TO BE SOLVED: To provide a method for manufacturing a single-electron transistor that is operated at a room temperature and has a simple manufacturing process. SOLUTION: In the method for manufacturing a single-electron transistor, a surface oxide layer 3 between a source electrode 4 and a d...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: INOUE ATSUHISA, FUJIOKA KAZUSHI, ONO KIMITAKA
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator INOUE ATSUHISA
FUJIOKA KAZUSHI
ONO KIMITAKA
description PROBLEM TO BE SOLVED: To provide a method for manufacturing a single-electron transistor that is operated at a room temperature and has a simple manufacturing process. SOLUTION: In the method for manufacturing a single-electron transistor, a surface oxide layer 3 between a source electrode 4 and a drain electrode 5 on a substrate 2 with the electrode structure of the source electrode 4, a gate electrode 6, and the drain electrode 5 formed in advance is partially released by a probe 9 in a solution containing a colloid particle 7 terminated by a thiol derivative molecule, thus exposing a substrate material-cleaning surface 8 to the solution. Then, the colloid particle 7 is selectively and chemically adsorbed, only on the substrate material surface 8 that has been exposed by the operation due to self-organization operation, thus forming the colloid particle 7 between the source electrode 4 and the gate electrode 6 in a single row.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2001119038A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2001119038A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2001119038A3</originalsourceid><addsrcrecordid>eNrjZLAJ9vRz93HVdfVxdQ4J8vdTCAly9Av2DA7xD1Jw9HNR8HX0C3VzdA4JDQKqU_B1DfHwd1EI8XANcnXzD-JhYE1LzClO5YXS3AxKbq4hzh66qQX58anFBYnJqXmpJfFeAUYGBoaGhpYGxhaOxkQpAgCExipU</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>SINGLE-ELECTRON TRANSISTOR AND MANUFACTURING METHOD THEREFOR</title><source>esp@cenet</source><creator>INOUE ATSUHISA ; FUJIOKA KAZUSHI ; ONO KIMITAKA</creator><creatorcontrib>INOUE ATSUHISA ; FUJIOKA KAZUSHI ; ONO KIMITAKA</creatorcontrib><description>PROBLEM TO BE SOLVED: To provide a method for manufacturing a single-electron transistor that is operated at a room temperature and has a simple manufacturing process. SOLUTION: In the method for manufacturing a single-electron transistor, a surface oxide layer 3 between a source electrode 4 and a drain electrode 5 on a substrate 2 with the electrode structure of the source electrode 4, a gate electrode 6, and the drain electrode 5 formed in advance is partially released by a probe 9 in a solution containing a colloid particle 7 terminated by a thiol derivative molecule, thus exposing a substrate material-cleaning surface 8 to the solution. Then, the colloid particle 7 is selectively and chemically adsorbed, only on the substrate material surface 8 that has been exposed by the operation due to self-organization operation, thus forming the colloid particle 7 between the source electrode 4 and the gate electrode 6 in a single row.</description><edition>7</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2001</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20010427&amp;DB=EPODOC&amp;CC=JP&amp;NR=2001119038A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20010427&amp;DB=EPODOC&amp;CC=JP&amp;NR=2001119038A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>INOUE ATSUHISA</creatorcontrib><creatorcontrib>FUJIOKA KAZUSHI</creatorcontrib><creatorcontrib>ONO KIMITAKA</creatorcontrib><title>SINGLE-ELECTRON TRANSISTOR AND MANUFACTURING METHOD THEREFOR</title><description>PROBLEM TO BE SOLVED: To provide a method for manufacturing a single-electron transistor that is operated at a room temperature and has a simple manufacturing process. SOLUTION: In the method for manufacturing a single-electron transistor, a surface oxide layer 3 between a source electrode 4 and a drain electrode 5 on a substrate 2 with the electrode structure of the source electrode 4, a gate electrode 6, and the drain electrode 5 formed in advance is partially released by a probe 9 in a solution containing a colloid particle 7 terminated by a thiol derivative molecule, thus exposing a substrate material-cleaning surface 8 to the solution. Then, the colloid particle 7 is selectively and chemically adsorbed, only on the substrate material surface 8 that has been exposed by the operation due to self-organization operation, thus forming the colloid particle 7 between the source electrode 4 and the gate electrode 6 in a single row.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2001</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLAJ9vRz93HVdfVxdQ4J8vdTCAly9Av2DA7xD1Jw9HNR8HX0C3VzdA4JDQKqU_B1DfHwd1EI8XANcnXzD-JhYE1LzClO5YXS3AxKbq4hzh66qQX58anFBYnJqXmpJfFeAUYGBoaGhpYGxhaOxkQpAgCExipU</recordid><startdate>20010427</startdate><enddate>20010427</enddate><creator>INOUE ATSUHISA</creator><creator>FUJIOKA KAZUSHI</creator><creator>ONO KIMITAKA</creator><scope>EVB</scope></search><sort><creationdate>20010427</creationdate><title>SINGLE-ELECTRON TRANSISTOR AND MANUFACTURING METHOD THEREFOR</title><author>INOUE ATSUHISA ; FUJIOKA KAZUSHI ; ONO KIMITAKA</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2001119038A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2001</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>INOUE ATSUHISA</creatorcontrib><creatorcontrib>FUJIOKA KAZUSHI</creatorcontrib><creatorcontrib>ONO KIMITAKA</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>INOUE ATSUHISA</au><au>FUJIOKA KAZUSHI</au><au>ONO KIMITAKA</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SINGLE-ELECTRON TRANSISTOR AND MANUFACTURING METHOD THEREFOR</title><date>2001-04-27</date><risdate>2001</risdate><abstract>PROBLEM TO BE SOLVED: To provide a method for manufacturing a single-electron transistor that is operated at a room temperature and has a simple manufacturing process. SOLUTION: In the method for manufacturing a single-electron transistor, a surface oxide layer 3 between a source electrode 4 and a drain electrode 5 on a substrate 2 with the electrode structure of the source electrode 4, a gate electrode 6, and the drain electrode 5 formed in advance is partially released by a probe 9 in a solution containing a colloid particle 7 terminated by a thiol derivative molecule, thus exposing a substrate material-cleaning surface 8 to the solution. Then, the colloid particle 7 is selectively and chemically adsorbed, only on the substrate material surface 8 that has been exposed by the operation due to self-organization operation, thus forming the colloid particle 7 between the source electrode 4 and the gate electrode 6 in a single row.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_JP2001119038A
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title SINGLE-ELECTRON TRANSISTOR AND MANUFACTURING METHOD THEREFOR
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-05T17%3A33%3A44IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=INOUE%20ATSUHISA&rft.date=2001-04-27&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJP2001119038A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true