NON-VOLATILE MEMORY DEVICE WITH BULK BIAS CONTACT STRUCTURE IN CELL ARRAY REGION

PROBLEM TO BE SOLVED: To provide a non-volatile memory device which has a uniform bulk current eliminating effect by keeping a bulk voltage lower than a certain voltage, and to enable the memory devices to be highly integrated by minimizing a bulk bias contact structure in layout area. SOLUTION: A non-volatile memory device is equipped with bit lines extending in parallel and word lines extending in parallel, the bit lines and the word lines are provided on a semiconductor substrate crossing each other at right angles, a cell array region which includes memory cells connected to the bit lines and word lines and common source lines provided in parallel with the bit lines, and a peripheral circuit region which drives the memory cells in the cell array region, where at least one or more bulk bias contact structures are provided in the cell array region so as to keep the voltage of a bulk region formed in the cell array region lower than a certain voltage. By this setup, a bulk region can be kept always at a certain voltage independently of the position of memory cells without increasing a cell array in area.