METHOD FOR MANUFACTURING ELECTRIC CONNECTION WIRING OF SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a method for manufacturing electric connection wiring of a semiconductor device. SOLUTION: An interlayer insulating layer is formed on a semiconductor substrate while a contact hole is formed at the interlayer insulating layer. An erosion-preventive plug comprising a...

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Bibliographische Detailangaben
Hauptverfasser: KIN IKKYU, RYU HONEI, RI GENTOKU
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a method for manufacturing electric connection wiring of a semiconductor device. SOLUTION: An interlayer insulating layer is formed on a semiconductor substrate while a contact hole is formed at the interlayer insulating layer. An erosion-preventive plug comprising an organic material for filling in the contact hole is formed. Here, the erosion-preventive plug is formed of an organic material such as photo-resist or organic polymer. A photo-resist pattern which exposes the erosion-preventive plug as well as an interlayer insulating layer part adjoining to the erosion-preventing plug is formed. The interlayer insulating layer part exposed with the photoresist pattern and the erosion-preventive plug is etched to form a channel contacting the contact hole. The erosion-preventive plug and the photo-resist pattern are removed. A conductive line for embedding the channel and contact hole is formed.