SCHOTTKY DIODE AND MANUFACTURING METHOD OF RELATED STRUCTURE

PROBLEM TO BE SOLVED: To provide an improved Schottky diode structure with no increased cost, which comprises a relatively low turn-on threshold and relatively low leakage current characteristics. SOLUTION: A barrier correction layer 20 between a surface anode and the cathode part which is inside an...

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1. Verfasser:	HULFACHOR RONALD
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide an improved Schottky diode structure with no increased cost, which comprises a relatively low turn-on threshold and relatively low leakage current characteristics. SOLUTION: A barrier correction layer 20 between a surface anode and the cathode part which is inside an epitaxial layer is formed so as to lower or raise the threshold turn-on electric potential of a Schottky diode depending on whether a diode junction silicide is formed of Ti or Pt. The barrier correction layer is so designed as to decrease or increase the invert leakage current of the Schottky diode structure depending on whether Ti or Pt is used to form a diode junction.