METHOD FOR FORMING OHMIC LAYER BY PLASMA CHEMICAL VAPOR DEPOSITION

PROBLEM TO BE SOLVED: To provide a method for forming an ohmic layer by plasma chemical vapor deposition(PCVD) which can improve resistivity characteristics and the problem that the surface of a semiconductor substrate is damaged, when titanium silicide is formed as an ohmic layer. SOLUTION: This me...

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Hauptverfasser:	LEE MYUNG BUM, BUN KOSHIN, RI GENTOKU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a method for forming an ohmic layer by plasma chemical vapor deposition(PCVD) which can improve resistivity characteristics and the problem that the surface of a semiconductor substrate is damaged, when titanium silicide is formed as an ohmic layer. SOLUTION: This method for forming an ohmic layer comprises a first step of forming injecting hydrogen or argon gas with a semiconductor substrate stored in the plasma chamber of a chemical vapor deposition system, a second step of injecting a Ti-containing source gas into the a plasma chamber, and a third step of forming a RF plasma in the plasma chamber to deposit a titanium film.