METHOD FOR CREATING MODEL PARAMETER OF BIPOLAR TRANSISTOR

PROBLEM TO BE SOLVED: To provide a method for creating a model parameter of a bipolar transistor. SOLUTION: Structure of each of a collector electrode, an emitter electrode and a base electrode of the bipolar transistor is selected, a kind of the bipolar transistor selected at the first step is selected, five change factors such as length of the emitter electrode, the number of emitter electrodes, the number of base electrodes, the number of pairs of the collector electrode and the emitter electrode are extracted and the model parameters of the bipolar transistor is calculated for five change factors. Thus, all parameters are expressed only by a reference value by every parameter and two coefficients as a coefficient α, a coefficient βby every parameter and the bipolar transistor is made into free size by expressing the parameters in equations in this way.