DEVICE FOR ATTACHING ALUMINUM OXIDE

PROBLEM TO BE SOLVED: To provide adhering treatment for forming a high quality aluminum oxide film by using low-pressure chemical vapor deposition(LPCVD) on a silicon substrate or an equivalent substrate by temperature controlling a steam transfer system during chemical vapor deposition of aluminum...

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Bibliographische Detailangaben
Hauptverfasser:	WILSON DONALD L, BARBEE STEVEN G, ZUHOSKI STEVEN P, RICHARD ANTHONY CONTEY, SARMA NARAYANA V, WONG JUSTIN WAIOW, KOSTENKO ALEXANDER
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide adhering treatment for forming a high quality aluminum oxide film by using low-pressure chemical vapor deposition(LPCVD) on a silicon substrate or an equivalent substrate by temperature controlling a steam transfer system during chemical vapor deposition of aluminum oxide. SOLUTION: A device in a chemical vapor deposition(CVD) system monitors the temperature of an actual wafer/substrate 10 during adhering treatment, and forms a high quality aluminum oxide film under real-time wafer/substrate control. In this case, source steam for LPCVD adhering aluminum oxide to a silicon substrate is repeatedly supplied exactly. This device is provided with a heated source substance, a heated transfer passage, heated inert gas discharge passages 21a-21c, pressure difference large flow rate controllers 24 and 28, a control system having a related valve, and a vacuum treatment chamber having a wall which is to be temperature-controlled as a complete source transfer system.