DRIVE CIRCUIT FOR FIELD-EFFECT TRANSISTOR

PROBLEM TO BE SOLVED: To obtain a drive circuit for a MOSFET with small power consumption and little in propagation delay and noise. SOLUTION: A level shift circuit 10 shifts the input voltage VI toward a power supply voltage VCC and the amplitude of the input voltage is limited and outputted from a...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
1. Verfasser: MURATA NORITAKA
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To obtain a drive circuit for a MOSFET with small power consumption and little in propagation delay and noise. SOLUTION: A level shift circuit 10 shifts the input voltage VI toward a power supply voltage VCC and the amplitude of the input voltage is limited and outputted from a node N1. Furthermore, an amplitude limiter circuit 20 limits the amplitude of the input voltage V1 and the resulting voltage is outputted from a node N2. The voltages of the nodes N1, N2 apply on/off control to a PNP 31 and an NPN 32 complementarily to drive the MOSFET connected to the output terminal OUT. Since the amplitude of the control voltage for the PNP 31 and the NPN 32 is limited, they are not simultaneously conductive and no through-current is produced between them. Furthermore, since the level shift circuit 10 and the amplitude limiter circuit 20 are configured with only passive components, and the drive circuit where deterioration in the characteristics such as a propagation delay is not caused with small power consumption and little production of noise can be obtained.