COMPOSITE ELECTRONIC DEVICE AND FABRICATION METHOD THEREOF

PROBLEM TO BE SOLVED: To provide a composite electronic device comprising small and light weight passive elements bonded onto a semiconductor substrate. SOLUTION: An oxide film 2 having contact holes 3 is formed on a silicon substrate 1 constituting an IC logic circuit, a lower Ti film 4 serving as...

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Bibliographische Detailangaben
1. Verfasser:	MATSUZAKI KAZUO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a composite electronic device comprising small and light weight passive elements bonded onto a semiconductor substrate. SOLUTION: An oxide film 2 having contact holes 3 is formed on a silicon substrate 1 constituting an IC logic circuit, a lower Ti film 4 serving as the lower electrode of a thin film capacitor 12 is formed on the oxide film 2, a ferroelectric Pb(Sc0.5>Ta0.5)O3 film 5 is formed on the lower Ti film 4, an upper Ti film 6 serving as the upper electrode of the thin film capacitor 12 is formed on the Pb(Sc0.5Ta0.5)O3 film 5, and the Pb(Sc0.5Ta0.5)O3 film 5 is sandwiched by the lower Ti film 4 and the upper Ti film 6 thus fabricating a thin film capacitor 12. An IC logic circuit formed on the semiconductor substrate 1 is interconnected through the Ti film 4 and the IC logic circuit, other semiconductor elements and the thin film capacitor 12 are interconnected through an Al interconnection. Since the Ti film is used for interconnection, the thin film capacitor 12 can be fabricated integrally on the semiconductor substrate 1 through a high temperature process.